CAPACITANCE MEASUREMENTS AS A NEW TOOL TO INVESTIGATE ELECTRONIC STATES OF DISLOCATIONS IN SEMICONDUCTORS

被引：13

作者：

MANTOVANI, S

DELPENNINO, U

MAZZEGA, E

机构：

[1] UNIV MODENA, OSSERVATORIO GEOFIS, MODENA, ITALY

[2] UNIV MODENA, IST FIS, MODENA, ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 35卷 / 02期

关键词：

D O I：

10.1002/pssa.2210350205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：451 / 457

页数：7

共 11 条

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[2] HIGH-DENSITY SATURATION EFFECTS OF DISLOCATIONS IN N-TYPE GERMANIUM
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GONDI, P
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[4] RESTORATION OF RESISTIVITY AND LIFETIME IN HEAT TREATED GERMANIUM
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[5] EDGE DISLOCATION BEHAVIOR IN AU-N-SILICON DIODES
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PENNINO, UD
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 747 - 754
[6] NABARRO FNR, THEORY CRYSTAL DISLO
[7] MAGNETIC-FIELD DEPENDENCE OF HALL-COEFFICIENT IN GERMANIUM
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (02): : 579 - 585
[8] ELECTRICAL PROPERTIES OF DISLOCATIONS IN GE AND SI
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LABUSCH, R
[J]. PHYSICA STATUS SOLIDI, 1969, 36 (02): : 539 - &
[9] Smith R. A., 1959, SEMICONDUCTORS
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO