THERMAL CONDUCTIVITY MEASUREMENTS OF SILICON FROM 680DEGREES TO 1000DEGREES K

被引：10

作者：

MORRIS, RG

MARTIN, JJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.1702752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2388 / &

共 12 条

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[8] THERMAL CONDUCTIVITY MEASUREMENTS OF SILICON FROM 30 DEGREES TO 425 DEGREES C [J].

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[9]

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[10] THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K [J].

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