MODEL DIFFRACTION PROFILES PARALLEL TO ROUGH STEP EDGES

被引：11

作者：

KARIOTIS, R ^{[1
]}

SWARTZENTRUBER, BS ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 06期

关键词：

D O I：

10.1063/1.345454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.

引用

页码：2848 / 2852

页数：5

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