THZ SPECTROSCOPY AND SOURCE CHARACTERIZATION BY OPTOELECTRONIC INTERFEROMETRY

被引：45

作者：

RALPH, SE

GRISCHKOWSKY, D

机构：

[1] IBM Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.106447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.

引用

页码：1070 / 1072

页数：3

共 24 条

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