IMPURITY STATES IN DOPED FULLERENES - C59B AND C59N

被引:181
作者
ANDREONI, W
GYGI, F
PARRINELLO, M
机构
[1] IBM Research Division, Zurich Research Laboratory
关键词
D O I
10.1016/0009-2614(92)85318-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using the Car-Parrinello method we have investigated theoretically the properties of the recently synthesized C59B and of the yet hypothetical C59N molecules. We show that doping induces important changes in both ionic and electronic properties of C60. The highest occupied molecular orbital is strongly localized and can act either as an electron acceptor state (C59B) or as a donor state (C59N). A parallel is drawn between this and the case of deep impurity states in semiconductors. Based on these results we speculate on potentially interesting properties of materials derived from these molecules.
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页码:159 / 162
页数:4
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