PREPARATION OF MGIN2O4-X THIN-FILMS ON GLASS SUBSTRATE BY RF-SPUTTERING

被引：62

作者：

UNNO, H

HIKUMA, N

OMATA, T

UEDA, N

HASHIMOTO, T

KAWAZOE, H

机构：

[1] TOKYO INST TECHNOL, ENGN MAT RES LAB, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN

[2] INST MOLEC SCI, OKAZAKI 444, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期

关键词：

MGLN2O4-X THIN FILM; NEW TRANSPARENT CONDUCTOR; RF SPUTTERING; WIDE BAND GAP (SIMILAR-TO-34 EV); HIGH CONDUCTIVITY;

D O I：

10.1143/JJAP.32.L1260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H-2 flow was 2.3 x 10(2) S/CM, With a carrier concentration of 6.3 x 10(20) CM-3 and a mobility of 2.2 cm2.V-1.s-1. No distinct optical absorption band was observed in the visible region.

引用

页码：L1260 / L1262

页数：3

共 3 条

[1] NEW OXIDE PHASE WITH WIDE BAND-GAP AND HIGH ELECTROCONDUCTIVITY CDGA2O4 SPINEL [J].