ON THE MECHANISM OF DEGRADATION IN SI/SIOX/AG METAL-OXIDE SEMICONDUCTOR SOLAR-CELLS

被引：6

作者：

KAR, S ^{[1
]}

VARGHESE, R ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4435 / 4440

页数：6

共 10 条

[1] AU AND AL INTERFACE REACTIONS WITH SIO2 [J].

BAUER, RS ;

BACHRACH, RZ ;

BRILLSON, LJ .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1006-1008

[2] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+

[3]

Kar S., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P922

[4] EVIDENCE OF TUNNEL-ASSISTED TRANSPORT IN NONDEGENERATE MOS AND SEMICONDUCTOR-OXIDE-SEMICONDUCTOR DIODES AT ROOM-TEMPERATURE [J].

KAR, S ;

ASHOK, S ;

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3417-3421

[5] ROLE OF INTERFACE STATES IN MOS SOLAR-CELLS [J].

KAR, S .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5278-5283

[6] DETERMINATION OF MINORITY-CARRIER LIFETIME USING MIS TUNNEL-DIODES [J].

KAR, S .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :587-589

[7]

KAR S, UNPUB

[8] A COMPARISON OF MAJORITY-CARRIER AND MINORITY-CARRIER SILICON MIS SOLAR-CELLS [J].

NG, KK ;

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :716-724

[9] ROLE OF OXYGEN IN THE MECHANISM OF FORMATION OF SCHOTTKY DIODES [J].

PONPON, JP ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6004-6011

[10] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].

WALDROP, JR ;

GRANT, RW .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :630-632

← 1 →