ELECTRICAL-PROPERTIES OF GALLIUM FLUORIDE(GAF3)/GAAS INTERFACE WITH AND WITHOUT SULFUR TREATMENT

被引：10

作者：

RICARD, H

KIM, KH

AIZAWA, K

ISHIWARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

SULFUR TREATMENT; MOLECULAR BEAM EPITAXY; INTERFACE PROPERTIES; PHOTOGENERATED INVERSION CARRIERS; GAAS; GAF3; MIS;

D O I：

10.1143/JJAP.29.L2460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of gallium fluoride (GaF3) films deposited on GaAs are investigated. It has been found that deposited GaF3 films are good insulators with a dielectric constant of 6.6 and a resistivity of 2 X 10(13) OMEGA.cm. It has also been found that the interface properties are good enough to generate inversion carriers either when a GaF3 film is deposited onto a homoepitaxial GaAs layer without breaking the vacuum or when the film is deposited on a sulfur-treated surface.

引用

页码：L2460 / L2462

页数：3

共 5 条

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