EXTREMELY LOW-VOLTAGE FABRY-PEROT REFLECTION MODULATORS

被引：50

作者：

YAN, RH

SIMES, RJ

COLDREN, LA

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 02期

关键词：

D O I：

10.1109/68.47066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a normally-on electroabsorptive surface-normal Fabry-Perot reflection modulator with a reflection change of 47% for an operating voltage swing of only 2 V, i.e., 23%/V which is the highest efficiency ever reported. The structure has an active region of twenty-four 100 Å GaAs/100 Å Al0.2Ga0.8As multiple quantum wells, sandwiched between two quarter-wavelength grating mirrors, the bottom one of which is more reflective. The wavelength range over which more than half of the maximum reflection change is observed extends as wide as ~ 7 nm for 2 V. © 1990 IEEE

引用

页码：118 / 119

页数：2

共 6 条

[1] AFRAMOWITZ MA, 1974, SOLID STATE COMMUN, V15, P59
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YAN, RH
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[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1989, 1 (09) : 273 - 275

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