EXCITED-STATE RESONANT TUNNELING IN GAAS-ALXGA1-XAS DOUBLE BARRIER HETEROSTRUCTURES

被引：12

作者：

REED, MA

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 01期

关键词：

D O I：

10.1016/0749-6036(86)90155-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

PHYSICS

引用

页码：65 / 67

页数：3

共 7 条

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[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

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[3]

CHANG LL, 1973, APPL PHYS LETT, V22, P562

[4] PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].

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AZBEL, MY .

PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981

[5] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

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CHAPIN, PC ;

COLEMAN, PD ;

KOPP, W ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510

[6] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[7] QUANTUM WELL OSCILLATORS [J].

SOLLNER, TCLG ;

TANNENWALD, PE ;

PECK, DD ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1319-1321

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