LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

CHONG, TC ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.98481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：221 / 223

页数：3

共 8 条

[1] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].

ARAKAWA, Y ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899

[2] GROWTH OF HIGH-QUALITY GAAS-LAYERS DIRECTLY ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

CHONG, TC ;

FONSTAD, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :815-818

[3] LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

VANDERZIEL, JP ;

LOGAN, RA ;

BROWN, JM ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :407-409

[4] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI [J].

FISCHER, R ;

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RICE, R .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1360-1361

[5] DYNAMIC AND NOISE PROPERTIES OF MULTIPLE QUANTUM WELL INJECTION-LASERS [J].

LINDSTROM, C ;

SCIFRES, DR ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :28-30

[6] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[7] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

MIKULYAK, RM ;

PINZONE, CJ ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :454-456

[8] ROOM-TEMPERATURE OPERATION OF GAAS/ALGAAS DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1031-1033

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