MICROWAVE CONDUCTIVITY OF POLAR SEMICONDUCTORS IN PRESENCE OF HIGH ELECTRIC FIELD

被引：10

作者：

DAS, P

RIFKIN, RH

POOLE, JJ

机构：

来源：

关键词：

D O I：

10.1049/el:19670406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：515 / &

共 7 条

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[2] MICROWAVE CONDUCTIVITY OF GERMANIUM
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[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 851 - &
[3] KOCHNER W, 1965, P IEEE, V53, P1234
[4] MICROWAVE CONDUCTIVITY OF SEMICONDUCTORS IN PRESENCE OF HIGH STEADY ELECTRIC FIELDS
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DAS, P
[J]. PHYSICAL REVIEW, 1963, 132 (06): : 2514 - &
[5] MICROWAVE CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-INSB AT 77 DEGREES K
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RICHTER, K
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1497 - &
[6] HOT ELECTRON MICROWAVE ROTATOR
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1766 - &
[7] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN POLAR CRYSTALS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 246 (1246): : 406 - 422