CORRELATION OF GAAS LATTICE-PARAMETER TO GROWTH AND ANNEALING CONDITIONS

被引：22

作者：

KUWAMOTO, H

HOLMES, DE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.336628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：656 / 658

页数：3

共 14 条

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[7] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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ELLIOTT, KR ;

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[8] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].

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[9] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS [J].

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