NEW RESULTS OF TRANSIENT-BEHAVIOR OF SINGLE INJECTION SCLC DIODES WITH ONE DEEP LEVEL

被引：1

作者：

DUDECK, I ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEW PHYS,MUNSTER,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1002/pssa.2210300207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：489 / 493

页数：5

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