EXTREMELY LOW THRESHOLD CURRENT ALGAAS BURIED-HETEROSTRUCTURE QUANTUM-WELL LASERS GROWN BY LIQUID-PHASE EPITAXY

被引：13

作者：

ALFEROV, ZI ^{[1
]}

ANDREYEV, VM ^{[1
]}

MEREUTZA, AZ ^{[1
]}

SYRBU, AV ^{[1
]}

YAKOVLEV, VP ^{[1
]}

机构：

[1] KISHINEV POLYTECH INST,KISHINEV 277012,MOLDAVIA,USSR

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 27期

关键词：

D O I：

10.1063/1.103762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on AlGaAs single quantum well buried-heterostructure lasers grown by two-step liquid phase epitaxy (LPE). The base laser structures were grown by low-temperature LPE in the temperature interval of 600-400-degrees-C. Broad-area threshold current densities of 300 A/cm2 were measured for 1-mm-long lasers. The buried heterostructure was formed in the second LPE process including in situ selective mesa melt etching. Threshold currents 1.3 mA in a continuous regime were obtained for uncoated lasers having 125-mu-m-long cavities.

引用

页码：2873 / 2875

页数：3

共 7 条

[1]

ALFEROV ZI, 1986, PISMA ZH TEKH FIZ+, V12, P1089

[2]

ALFEROV ZI, 1988, SOV J TECH PHYS LETT, V14, P2055

[3] ULTRALOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL (AL,GA)AS LASERS [J].