SOFT-ERROR IMMUNITY EVALUATION OF DRAM USING HIGH-ENERGY NUCLEAR MICROPROBE

被引：1

作者：

SAYAMA, H

HARA, S

ANDOH, H

KIMURA, H

OHNO, Y

SATOH, S

TAKAI, M

机构：

[1] Faculty of Engineering Science, Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka

[2] LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90058-D

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Soft-errors of 16M DRAMs have been measured using a 400 keV proton microprobe. The susceptibility mapping was newly developed to show the correlation between particle hit-position and susceptibility against upset. The incidence of ions gave arise to cell-mode soft-errors. The soft-errors were found to take place by hits of ions within 6 mum around a cell.

引用

页码：213 / 216

页数：4

共 7 条

[1]

May, Woods, IEEE Trans. Electron Devices, 26 ED, (1979)

[2]

Yaney, Nelson, Vanskike, IEEE Trans. Electron Devices, 26 ED, (1979)

[3]

Zoutendyk, Edmonds, Smith, IEEE Trans. Nucl. Sci., 36 NS, (1989)

[4]

Takai, FORMATION OF HIGH ENERGY MICROBEAMS AND THEIR APPLICATION TO MICROELECTRONICS, International Journal of PIXE, 2, (1992)

[5]

Campbell, Knudson, Wolicki, Nucl. Instr. & Methods, 191, (1981)

[6]

Geppert, Bapst, Heidl, Jenkins, IEEE Solid State Circuits, 26, (1991)

[7]

Horn, Doyle, Sexton, IEEE Trans. Nucl. Sci., 39 NS, (1992)

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