ACTIVATION-ENERGY FOR C94 AND C54 TISI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING

被引：22

作者：

COLGAN, EG ^{[1
]}

CLEVENGER, LA ^{[1
]}

CABRAL, C ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The activation energies E(a) for C49 and C54 TiSi2 formation were determined using in situ resistance measurements during rapid thermal annealing. Ti films were evaporated on undoped polycrystalline Si (poly-Si) and single-crystal Si on sapphire (SOS) substrates. The resistance was monitored for heating rates from 1 to 95 -degrees-C/s up to 1000 -degrees-C. The E(a)'s determined from Kissinger plots were 1.86+/-0.23 and 1.65+/-0.31 eV for C49 TiSi2 formation and 3.30+/-0.16 and 3.67+/-0.13 eV for C54 TiSi2 formation for Ti/poly-Si and Ti/SOS samples, respectively. These are the first reported measurements of E(a)'s for C49 and C54 TiSi2 formation at such high heating rates. The formation sequence remained the same for the range of heating rates examined. (C) 1994 American Institute of Physics.

引用

页码：2009 / 2011

页数：3

共 14 条

[1] IMPROVED CONTROL OF MOMENTARY RAPID THERMAL ANNEALING FOR SILICIDATION [J].