IMPURITY LEVELS IN PBTE AND PB1-XSNXTE

被引：36

作者：

LENT, CS

BOWEN, MA

ALLGAIER, RS

DOW, JD

SANKEY, OF

HO, ES

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

[2] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 02期

关键词：

D O I：

10.1016/0038-1098(87)90932-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：83 / 87

页数：5

共 20 条

[1]

AVERKIN AA, 1971, SOV PHYS SEMICOND+, V5, P75

[2] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J].

DIMMOCK, JO ;

MELNGAIL.I ;

STRAUSS, AJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1193-&

[3]

HEINRICH H, 1980, LECTURE NOTES PHYSIC, V133, P407

[4] CLUSTER CALCULATIONS OF EFFECTS OF LATTICE VACANCIES IN PBTE AND SNTE [J].

HEMSTREET, LA .

PHYSICAL REVIEW B, 1975, 12 (04) :1212-1217

[5] CLUSTER CALCULATIONS OF EFFECTS OF SINGLE VACANCIES OF ELECTRONIC PROPERTIES OF PBS [J].

HEMSTREET, LA .

PHYSICAL REVIEW B, 1975, 11 (06) :2260-2270

[6] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[7]

HJALMARSON HP, UNPUB, P94108

[8] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].

HSU, WY ;

DOW, JD ;

WOLFORD, DJ ;

STREETMAN, BG .

PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615

[9]

Kaidanov V. I., 1985, Soviet Physics - Uspekhi, V28, P31, DOI 10.1070/PU1985v028n01ABEH003632

[10]

KAIDANOV VI, 1983, SOV PHYS SEMICOND+, V17, P1027

← 1 2 →