OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON

被引：180

作者：

TAN, TY ^{[1
]}

TICE, WK ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

PHILOSOPHICAL MAGAZINE | 1976年 / 34卷 / 04期

关键词：

D O I：

10.1080/14786437608223798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：615 / 631

页数：17

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