PHOTOCONDUCTIVITY MEASUREMENTS ON AMORPHOUS GESE FILMS

被引：8

作者：

HAUSLER, H ^{[1
]}

PUSCH, T ^{[1
]}

机构：

[1] TECH UNIV DRESDEN,SEKT INFORMAT TECH,DDR-8027 DRESDEN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 40卷 / 01期

关键词：

D O I：

10.1002/pssa.2210400148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K15 / K17

页数：3

共 9 条

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[2]

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[3]

MAIN C, 1973, 5TH P INT C AM SEM G

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OWEN, AE .

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[5] THEORY OF PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING RELATIVELY NARROW TRAP BANDS [J].

SIMMONS, JG ;

TAYLOR, GW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17) :3051-3066

[6]

Simmons JG., 1972, J NON-CRYST SOLIDS, V8-10, P947, DOI [10.1016/0022-3093(72)90251-7, DOI 10.1016/0022-3093(72)90251-7]

[7] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

SPEAR, WE ;

LOVELAND, RJ ;

ALSHARBA.A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422

[8] PHOTOCONDUCTIVITY AND DETERMINATION OF TRAPPING PARAMETERS IN AMORPHOUS-SEMICONDUCTORS [J].

TAYLOR, GW ;

SIMMONS, JG .

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[9]

TAYLOR GW, 1972, J NONCRYST SOLIDS, V8, P940

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