SENSING MECHANISM OF SNO2 GAS SENSORS

被引：42

作者：

IPPOMMATSU, M ^{[1
]}

SASAKI, H ^{[1
]}

YANAGIDA, H ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,TOKYO 113,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE | 1990年 / 25卷 / 1A期

关键词：

D O I：

10.1007/BF00544217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies have been made of the gas sensing properties of both steady and unsteady state SnO2 thin film gas sensors in contact with CH4 and H2 in air from 400 to 500° C. The results suggest a new sensing mechanism model for SnO2 semiconductor flammable gas sensors. This model is based on the following points: (i) Sensor conductivity is determined by the concentration of carrier electrons. (ii) Carrier concentration is controlled by surface unsaturated oxygen adsorption site concentration which is decided by the balance between oxygen adsorption and the surface reaction between oxygen adsorbate and flammable gases. (iii) The activation energy of the reaction is changed by the Fermi energy change for any change in sensor conductivity. This model explains all experimental results. © 1990 Chapman and Hall Ltd.

引用

页码：259 / 262

页数：4

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