INFRARED STUDY OF HYDROGEN-IMPLANTED AND CARBON-IMPLANTED HEAVILY DOPED, N-TYPE GAAS

被引：16

作者：

LIOU, LL

SPITZER, WG

ZAVADA, JM

JENKINSON, HA

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

[2] USA,RES OFF,RES TRIANGLE PK,NC 27709

[3] USA,CTR ARMAMENT RES & DEV,DOVER,NJ 07801

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1936 / 1945

页数：10

共 35 条

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