REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GAAS GROWN BY MBE

被引：11

作者：

IIMURA, Y

TAKASUGI, H

KAWABE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.95

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：95 / 98

页数：4

共 13 条

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