HETEROEPITAXIAL GROWTH OF INP ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

LEE, MK

WUU, DS

TUNG, HH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3209 / 3211

页数：3

共 14 条

[1] THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP [J].

ASHEN, DJ ;

ANDERSON, DA ;

APSLEY, N ;

EMENY, MT .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :225-234

[2]

ASIA H, 1983, J APPL PHYS, V54, P2052

[3]

BASS J, 1983, J CRYST GROWTH, V64, P68

[4] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHEN, CH ;

KITAMURA, M ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965

[5]

Cullity B.D., 1978, ANSWERS PROBLEMS ELE

[6] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J].

DENTAI, AG ;

JOYNER, CH ;

TELL, B ;

ZYSKIND, JL ;

SULHOFF, JW ;

FERGUSON, JF ;

CENTANNI, JC ;

CHU, SNG ;

CHENG, CL .

ELECTRONICS LETTERS, 1986, 22 (22) :1186-1188

[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[8] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[10] ADDUCTS IN THE GROWTH OF III-V-COMPOUNDS [J].

MOSS, RH .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :78-87

← 1 2 →