LATERAL RESURFED COMFET

被引:47
作者
DARWISH, M
BOARD, K
机构
关键词
D O I
10.1049/el:19840360
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:519 / 520
页数:2
相关论文
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[4]  
Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79
[5]   THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].
RUSSELL, JP ;
GOODMAN, AM ;
GOODMAN, LA ;
NEILSON, JM .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :63-65
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VLADIMIRESCU A, SPICE2 COMPUTER PROG