ELECTRICAL TRANSPORT-PROPERTIES OF HIGH-RESISTANCE CR-SI-O THIN-FILMS

被引:21
作者
GLADUN, C
HEINRICH, A
LANGE, F
SCHUMANN, J
VINZELBERG, H
机构
[1] Akad der Wissenshaften der DDR,, Zentralinstitut fuer, Festkoerperphysik und, Akad der Wissenshaften der DDR, Zentralinstitut fuer Festkoerperphysik und Werkstofforschung, Dresd
关键词
METAL-SEMICONDUCTOR TRANSITION - OXYGEN CONTENTS - RUTHERFORD BACKSCATTERING;
D O I
10.1016/0040-6090(85)90401-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:101 / 106
页数:6
相关论文
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