BLUE-LIGHT EMITTING DIODES ON THE BASE OF ZNSE SINGLE-CRYSTALS

A new method is proposed to control the defect composition in chalcogenide semiconductors. To achieve an inversion of the mono-polar n-type semiconductor to p-type conductivity, the crystals should be annealed in an activated chalcogenide vapour at the certain temperature. The new low temperature technique for growing II-VI semiconductor structures (radical beam gettering epitaxy) is used. Radiative and electrophysical properties of p-n junctions on ZnSe basis obtained with the help of this technique have been studied. Light emission begins at forward bias U > 1.7 V. The efficiency of blue light emitting diode is about 10(-3) photon/electron.