BROAD-AREA PHOTOELECTROCHEMICAL ETCHING OF N-TYPE BETA-SIC

被引：35

作者：

SHOR, JS ^{[1
]}

OSGOOD, RM ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 08期

关键词：

D O I：

10.1149/1.2220722

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Wafer-scale etching of beta-SiC is demonstrated using UV-lamp-assisted photoelectrochemical etching in conjunction with photolithographically defined masks. The process exhibits high etch rates and dopant selectivity, features not available using other SiC etching methods.

引用

页码：L123 / L125

页数：3

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APPLIED PHYSICS LETTERS, 1992, 60 (08) :1001-1003

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