ELECTRON-DIFFUSION LENGTHS IN LIQUID-PHASE EPITAXIAL P-GAAS-GE LAYERS DETERMINED BY ELECTRON-BEAM-INDUCED CURRENT METHOD

被引:7
作者
SHEN, CC
PANDE, KP
PEARSON, GL
机构
[1] BENDIX ADV TECHNOL CTR,COLUMBIA,MD 21045
[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
关键词
D O I
10.1063/1.330536
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1236 / 1237
页数:2
相关论文
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SOLID-STATE ELECTRONICS, 1965, 8 (10) :807-+
[4]  
SEKELA AM, 1975, 1974 P S GAAS REL MA, P245
[5]   CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS [J].
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