EFFECT OF IMPURITY ATOM SIZE ON GROWN-IN DISLOCATION DENSITY OF CRYSTALS OF III-V COMPOUNDS

被引：6

作者：

SUCHOW, L

机构：

来源：

MATERIALS RESEARCH BULLETIN | 1982年 / 17卷 / 11期

关键词：

D O I：

10.1016/0025-5408(82)90225-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1401 / 1406

页数：6

共 11 条

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[3]

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[4]

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BONNER, WA ;

CHIN, AK ;

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MATSUI, J ;

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[8]

Pauling L., 1960, NATURE CHEM BOND

[9] IMPURITY EFFECT ON GROWTH OF DISLOCATION-FREE INP SINGLE-CRYSTALS [J].

SEKI, Y ;

MATSUI, J ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3374-3376

[10] IMPURITY EFFECT ON GROWN-IN DISLOCATION DENSITY OF INP AND GAAS CRYSTALS [J].

SEKI, Y ;

WATANABE, H ;

MATSUI, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :822-828

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