OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES

被引：273

作者：

HOLLINGER, G ^{[1
]}

HIMPSEL, FJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572199

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：640 / 645

页数：6

共 18 条

[1] Bauer R. S., 1979, Physics of Semiconductors 1978, P797
[2] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON
CHEN, M
BATRA, IP
BRUNDLE, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1216 - 1220
[3] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[4] AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
EASTMAN, DE
DONELON, JJ
HIEN, NC
HIMPSEL, FJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2): : 327 - 336
[5] A STUDY OF SCHOTTKY-BARRIER FORMATION FOR GA-SI(111)-(2X1) AND SB-SI(111)-(2X1) INTERFACES
FREEOUF, JL
AONO, M
HIMPSEL, FJ
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 681 - 684
[6] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
GARNER, CM
LINDAU, I
SU, CY
PIANETTA, P
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956
[7] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
GRUNTHANER, FJ
GRUNTHANER, PJ
VASQUEZ, RP
LEWIS, BF
MASERJIAN, J
MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686
[8] MORPHOLOGY AND ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACES AND SI SURFACES
HELMS, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 608 - 614
[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[10] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE
HOLLINGER, G
[J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336

← 1 2 →