NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAAS/ALAS SUPERLATTICES

被引：55

作者：

SIBILLE, A ^{[1
]}

PALMIER, JF ^{[1
]}

MOLLOT, F ^{[1
]}

WANG, H ^{[1
]}

ESNAULT, JC ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR,F-92220 BAGNEUX,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.39.6272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6272 / 6275

页数：4

共 17 条

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[7] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE
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[8] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
[9] STEADY-STATE ELECTRON-TRANSPORT IN SHORT GAAS N+-N-N+ STRUCTURES
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) : 754 - 757
[10] AMPLIFICATION IN 2-VALLEY SEMICONDUCTORS
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