LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS

[1] ABRAGAM A, 1970, ELECT PARAMAGNETIC R, P284

[2] ASZODI G, UNPUB

[3] BROWN MR, 1974, ADV QUANTUM ELECTRON, V2, P69

[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945

[5] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168

[6] DONOR-ACCEPTOR PAIRS IN GAP AND GAAS INVOLVING THE DEEP NICKEL ACCEPTOR [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 355 - 357

[7] ENNEN H, 1982, Patent No. 33441383

[8] KAMINSKII AA, 1981, LASER CRYSTALS, P322

[9] KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352

[10] KASATKIN VA, 1982, SOV PHYS SEMICOND+, V16, P106

[1] ABRAGAM A, 1970, ELECT PARAMAGNETIC R, P284

[2] ASZODI G, UNPUB

[3] BROWN MR, 1974, ADV QUANTUM ELECTRON, V2, P69

[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945

[5] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168

[6] DONOR-ACCEPTOR PAIRS IN GAP AND GAAS INVOLVING THE DEEP NICKEL ACCEPTOR [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 355 - 357

[7] ENNEN H, 1982, Patent No. 33441383

[8] KAMINSKII AA, 1981, LASER CRYSTALS, P322

[9] KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352

[10] KASATKIN VA, 1982, SOV PHYS SEMICOND+, V16, P106