TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED

被引：385

作者：

MEYER, JR ^{[1
]}

HOFFMAN, CA ^{[1
]}

BARTOLI, FJ ^{[1
]}

RAMMOHAN, LR ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,WORCESTER,MA 01609

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 06期

关键词：

D O I：

10.1063/1.115216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1-xInxSb-InAs-Ga1-xAlxSb Type-II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement. (C) 1995 American Institute of Physics.

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页码：757 / 759

页数：3

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