LOW-FREQUENCY NOISE PHYSICAL ANALYSIS FOR THE IMPROVEMENT OF THE SPECTRAL PURITY OF GAAS-FETS OSCILLATORS

被引：27

作者：

GRAFFEUIL, J ^{[1
]}

TANTRARONGROJ, K ^{[1
]}

SAUTEREAU, JF ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,F-31062 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 05期

关键词：

D O I：

10.1016/0038-1101(82)90121-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：367 / 374

页数：8

相关论文

共 15 条

[1] FET NOISE SOURCES AND THEIR EFFECTS ON AMPLIFIER PERFORMANCE AT LOW FREQUENCIES
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 338 - +
[2] LUMPED MODEL ANALYSIS OF LOW FREQUENCY GENERATION NOISE IN GOLD-DOPED SILICON JUNCTION-GATE FIELD-EFFECT TRANSISTORS
FU, HS
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (08) : 605 - +
[3] LOW-FREQUENCY NOISE IN GAAS SCHOTTKY-GATE FETS
GRAFFEUIL, J
CAIMINADE, J
[J]. ELECTRONICS LETTERS, 1974, 10 (13) : 266 - 268
[4] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
GREBENE, AB
GHANDHI, SK
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +
[5] HIATT LF, 1975, IEEE T ELECTRON DEV, V22, P614
[6] 1/F NOISE IS NO SURFACE EFFECT
HOOGE, FN
[J]. PHYSICS LETTERS A, 1969, A 29 (03) : 139 - &
[7] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS
LAURITZEN, PO
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 41 - +
[8] LORIOU B, 1977, 7TH P EUR MICR C, P95
[9] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
SAH, CT
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 795 - +
[10] SAUTEREAU JF, 1981, 11TH P EUR MICR C