PERTURBATION STUDY OF LOW-LYING SIO ELECTRONIC STATES

被引：21

作者：

FIELD, RW

LAGERQVIST, A

RENHORN, I

机构：

[1] MIT,DEPT CHEM,CAMBRIDGE,MA 02139

[2] UNIV STOCKHOLM,INST PHYS,S-11346 STOCKHOLM,SWEDEN

来源：

JOURNAL OF CHEMICAL PHYSICS | 1977年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.433922

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：868 / 869

页数：2

共 24 条

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