DETAILED STUDIES OF OPTICAL EDGE AND BELOW GAP ABSORPTION IN A-SI1-XCX-H SYSTEM

被引：16

作者：

NONOMURA, S ^{[1
]}

SAKATA, S ^{[1
]}

KAMADA, T ^{[1
]}

KIDA, H ^{[1
]}

KRUANGAM, D ^{[1
]}

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90797-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：865 / 868

页数：4

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[10] BACK SURFACE REFLECTED ELECTROABSORPTION AS A NEW CHARACTERIZATION METHOD OF INTERNAL POTENTIAL IN A-SI HOMOJUNCTION AND HETEROJUNCTION [J].

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