CHARGE COLLECTION IN CMOS/SOS STRUCTURES

被引：11

作者：

CAMPBELL, AB ^{[1
]}

KNUDSON, AR ^{[1
]}

STAPOR, WJ ^{[1
]}

SHAPIRO, P ^{[1
]}

DIEHLNAGLE, SE ^{[1
]}

HAUSER, J ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27685

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4128 / 4132

页数：5

共 8 条

[1] SOFT ERROR DEPENDENCE ON FEATURE SIZE [J].

BRUCKER, GJ ;

SMELTZER, R ;

KOLASINSKI, WA ;

KOGA, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1562-1564

[2] CHARGE COLLECTION IN TEST STRUCTURES [J].

CAMPBELL, AB ;

KNUDSON, AR ;

SHAPIRO, P ;

PATTERSON, DO ;

SEIBERLING, LE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4486-4492

[3] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[4] TRANSIENT PHOTOCURRENTS IN SOS STRUCTURES [J].

KJAR, RA ;

KINOSHITA, G .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :315-318

[5] INVESTIGATION OF SOFT UPSETS IN INTEGRATED-CIRCUIT MEMORIES AND CHARGE COLLECTION IN SEMICONDUCTOR TEST STRUCTURES BY THE USE OF AN ION MICROBEAM [J].

KNUDSON, AR ;

CAMPBELL, AB .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :625-631

[6] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1190-1195

[7]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

[8] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500

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