DOMAIN-WALLS IN ANTIFERROMAGNETICALLY COUPLED MULTILAYERED FILMS

被引:4
作者
FUJIWARA, H [1 ]
机构
[1] CTR MAT INFORMAT TECHNOL,TUSCALOOSA,AL 35487
关键词
D O I
10.1109/20.280955
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Energy comparison between Neel type and Bloch type walls has been performed for antiferromagnetically coupled multi-layered magnetic thin films. For the derivation of energy formulae, the coupling is dealt with as an effective field, H(S), which acts as a kind of uniaxial anisotropy. This causes substantial reduction of the width of the walls of both Neel type and Bloch type and the increase in the wall energy. Energy calculations have been performed for [2 nm Co/1 nm CU]N multi-layered films and ft is confirmed that for higher H(S), than about 8 kOe, there is a possibility of forming such Bloch type walls as the magnetizations in the adjacent layers point antiparallel to each other. These are named antiparallel Bloch walls. Perpendicular anisotropy which is often observed in thin magnetic films and the displacement of the center of the walls of adjacent layers with respect to each other will further help the formation of such walls.
引用
收藏
页码:2557 / 2559
页数:3
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