THE FUTURE OF ULTRA-SMALL-GEOMETRY MOSFETS BEYOND 0.1 MICRON

被引：19

作者：

IWAI, H

MOMOSE, HS

SAITO, M

ONO, M

KATSUMATA, Y

机构：

[1] ULSI Research Laboratories, Research and Development Center, Toshiba Corporation 1, Saiwai-ku, Kawasaki, 210, Komukai Toshiba-cho

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00034-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we discuss small-geometry MOSFETs with gate lengths below 0.1 mu m and talk about the limits to the down-sizing of MOSFETs. We also consider future ULSIs containing such ultra-small-geometry MOSFETs.

引用

页码：147 / 154

页数：8

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