DEGRADATION IN ZINC-DOPED GAAS TUNNEL DIODES

被引：6

作者：

EPSTEIN, AS

CALDWELL, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.1702885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2481 / &

共 16 条

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[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

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GOOCH, CH .

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[5]

EPSTEIN A, TO BE PUBLISHED

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS [J].

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WOLFSTIRN, KB .

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[7] ELECTRICAL PROPERTIES OF LI IN GAAS [J].

FULLER, CS ;

WOLFSTIRN, KB .

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[8]

GOLD RD, 1961, IRE T ELECTRON DEVIC, VED 8, P428

[9]

GOLD RD, 1961, B AM PHYS SOC, V2, P312

[10]

HENKEL HJ, 1962, Z NATURFORSCH, VA 17, P358

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