CDTE JUNCTION PHENOMENA

被引：36

作者：

BUBE, RH

机构：

[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA

来源：

SOLAR CELLS | 1988年 / 23卷 / 1-2期

关键词：

CADMIUM TELLURIDE - INDIUM TIN OXIDE - ION-BEAM DOPING - JUNCTION PHENOMENA - JUNCTION TRANSPORT MODELS - STOICHIOMETRY;

D O I：

10.1016/0379-6787(88)90003-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

(Edited Abstract)

引用

收藏

页码：1 / 17

页数：17

相关论文

共 72 条

[1] ELECTRICAL-PROPERTIES OF CDTE-FILMS AND JUNCTIONS
ANTHONY, TC
FAHRENBRUCH, AL
PETERS, MG
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 400 - 410
[2] LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE
ANTHONY, TC
FAHRENBRUCH, AL
BUBE, RH
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 89 - 109
[3] GROWTH OF CDTE-FILMS BY CLOSE-SPACED VAPOR TRANSPORT
ANTHONY, TC
FAHRENBRUCH, AL
BUBE, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1296 - 1302
[4] ANTHONY TC, 1984, 17TH P IEEE PHOT SPE
[5] PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS
ARANOVICH, JA
GOLMAYO, D
FAHRENBRUCH, AL
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4260 - 4268
[6] OHMIC ELECTRICAL CONTACTS TO P-TYPE ZNTE AND ZNSEXTE1-X
AVEN, M
GARWACKI, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (10) : 1063 - &
[7] AVEN M, 1969, OHMIC CONTACTS SEMIC
[8] BARBE M, 1982, 16TH P IEEE PHOT SPE
[9] HIGH-EFFICIENCY ELECTROPLATED HETEROJUNCTION SOLAR-CELL
BASOL, BM
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 601 - 603
[10] MERCURY CADMIUM TELLURIDE SOLAR-CELL WITH 10.6-PERCENT EFFICIENCY
BASOL, BM
TSENG, ES
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (14) : 946 - 948

← 1 2 3 4 5 6 7 8 →