RF RELAXATION OSCILLATIONS IN POLYCRYSTALLINE TIO-2 THIN-FILMS

被引：14

作者：

TAYLOR, G ^{[1
]}

LALEVIC, B ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,COLL ENGN,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 08期

关键词：

D O I：

10.1016/0038-1101(76)90143-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：669 / 674

页数：6

共 12 条

[1] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J].

BARNETT, AM ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4215-&

[2] OBSERVATION OF CURRENT FILAMENTS IN SEMI-INSULATING GAAS [J].

BARNETT, AM ;

JENSEN, HA .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :341-&

[3] EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E) [J].

CROWDER, BL ;

MOREHEAD, FF ;

WAGNER, PR .

APPLIED PHYSICS LETTERS, 1966, 8 (06) :148-&

[4]

GEPPERT DV, 1963, P IEEE, P223

[5] A GAAS1-XPX NEGATIVE-RESISTANCE LIGHT-EMITTING DIODE [J].

GERHARD, GC ;

JENSEN, HA .

APPLIED PHYSICS LETTERS, 1967, 10 (12) :333-&

[6] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1963, 2 (04) :71-73

[7]

JAKETA Y, 1975, AUG C PREP PROP EL M

[8]

LAMPERT MA, 1963, P IRE, V5, P1781

[9] SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICON [J].

MOORE, JS ;

HOLONYAK, N ;

SIRKIS, MD ;

BLOUKE, MM .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :58-&

[10] ANALYSIS OF AN INHOMOGENEOUS BULK S-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY ELEMENT IN A CIRCUIT CONTAINING REACTIVE ELEMENTS [J].

SHAW, MP ;

GRUBIN, HL ;

GASTMAN, IJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :169-178

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