ETCHING CHARACTERIZATION OF (001) SEMI-INSULATING GAAS WAFERS

被引：13

作者：

OKADA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 417

页数：5

共 12 条

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[8] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

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[9] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL [J].

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