INTERACTING DONORS IN N-TYPE GAP STUDIED WITH RAMAN-SCATTERING AND ELECTRON-SPIN-RESONANCE TECHNIQUES

被引：15

作者：

GALTIER, P ^{[1
]}

MARTINEZ, G ^{[1
]}

LAMBERT, B ^{[1
]}

GAUNEAU, M ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB ICM,F-22301 LANNION,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.6909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6909 / 6915

页数：7

共 20 条

[1] EXCHANGE NARROWING IN PARAMAGNETIC RESONANCE
ANDERSON, PW
WEISS, PR
[J]. REVIEWS OF MODERN PHYSICS, 1953, 25 (01) : 269 - 276
[2] BAIRAMOV BK, 1983, JETP LETT+, V38, P281
[3] INFRARED-ABSORPTION OF LOCALIZED LONGITUDINAL-OPTICAL PHONONS
BARKER, AS
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2507 - 2520
[4] COMPLEX FORM OF DONOR ENERGY-LEVELS IN GALLIUM-PHOSPHIDE
CARTER, AC
DEAN, PJ
SKOLNICK, MS
STRADLING, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (24): : 5111 - 5129
[5] DETERMINATION OF DONOR PAIR EXCHANGE ENERGY IN PHOSPHORUS-DOPED SILICON
CULLIS, PR
MARKO, JR
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 632 - &
[6] OBSERVATION OF OPTICAL PHONONS BOUND TO NEUTRAL DONORS
DEAN, PJ
MANCHON, DD
HOPFIELD, JJ
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (15) : 1027 - &
[7] FEHR G, 1959, PHYS REV, V114, P1219
[8] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES
FRITZSCHE, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80
[9] PHONONS BOUND TO SULFUR COMPLEXES IN GAP
GALTIER, P
MARTINEZ, G
GRYNBERG, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35): : L939 - L942
[10] TELLURIUM DONORS IN SILICON
GRIMMEISS, HG
JANZEN, E
ENNEN, H
SCHIRMER, O
SCHNEIDER, J
WORNER, R
HOLM, C
SIRTL, E
WAGNER, P
[J]. PHYSICAL REVIEW B, 1981, 24 (08) : 4571 - 4586