INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH CARBON-DOPED BASE

被引：30

作者：

GEE, RC ^{[1
]}

CHIN, TP ^{[1
]}

TU, CW ^{[1
]}

ASBECK, PM ^{[1
]}

LIN, CL ^{[1
]}

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,DIV RES,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期

关键词：

D O I：

10.1109/55.145042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBT's) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCI4) as the dopant source. The resulting hole concentration in the base was 1 x 10(19) cm-3. HBT's fabricated using material from this growth method display good I-V characteristics with dc current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT.

引用

页码：247 / 249

页数：3

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