LATTICE RELAXATIONS AT SUBSTITUTIONAL IMPURITIES IN SEMICONDUCTORS

[1] ANDERSEN OK, 1985, HIGHLIGHTS CONDENSED, P59

[2] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228

[3] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[4] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 171 - +

[5] LATTICE-DISTORTIONS AROUND ATOMIC SUBSTITUTIONS IN II-VI ALLOYS [J]. PHYSICA B & C, 1987, 146 (1-2): : 150 - 175

[6] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866

[7] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742

[8] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[9] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1129 - 1132

[10] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[1] ANDERSEN OK, 1985, HIGHLIGHTS CONDENSED, P59

[2] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228

[3] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[4] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 171 - +

[5] LATTICE-DISTORTIONS AROUND ATOMIC SUBSTITUTIONS IN II-VI ALLOYS [J]. PHYSICA B & C, 1987, 146 (1-2): : 150 - 175

[6] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866

[7] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742

[8] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[9] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1129 - 1132

[10] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852