TRANSIENT CHARGE AND CURRENT DISTRIBUTIONS IN NITRIDE OF MNOS DEVICES

被引：15

作者：

LEHOVEC, K

FEDOTOWSKY, A

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 05期

关键词：

D O I：

10.1109/T-ED.1977.18774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：536 / 540

页数：5

共 15 条

[1]

ABRAMOVITZ, 1965, HDB MATHEMATICAL FUN, P896

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].

ARNETT, PC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243

[4]

CRAIN D, 1976, THESIS U SO CALIFORN, P73

[5]

CRICCHI JR, 1976, AUG IEEE WORKSH NONV

[6] CHARGE CENTROID AND TRAPPING MODEL FOR MNOS STRUCTURES [J].

LEHOVEC, K ;

CRAIN, DW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2763-2764

[7]

LEHOVEC K, 1977, J ELECTRON MATER, V6, P77, DOI 10.1007/BF02660376

[8]

LEHOVEC K, UNPUBLISHED

[9] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].

MAES, H ;

VANOVERSTRAETEN, RJ .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284

[10] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS [J].

TAYLOR, GW ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :1-10

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