EXTREMELY NARROW LINEWIDTH (APPROXIMATELY 1-MHZ) AND HIGH-POWER DFB LASERS GROWN BY MOVPE

被引：10

作者：

KONDO, Y

SATO, K

NAKAO, M

FUKUDA, M

OE, K

机构：

[1] NTT Opto-Electronics Lab, Japan

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 03期

关键词：

Semiconductor Diodes - Semiconductor Materials--Growth;

D O I：

10.1049/el:19890128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A suitable structure of narrow linewidth DFB laser is studied experimentally. By thinning the active layer to around 0.07 μm, controlling kL to 1.0, and improving the geometrical uniformity of active region, the linewidth less than 1 MHz is achieved at an output power of around 20 mw in 1.55 μm DFB lasers with 1.2 mm long cavity length.

引用

页码：175 / 177

页数：3

共 5 条

[1] IMPROVEMENT IN DIFFERENTIAL QUANTUM EFFICIENCY OF 1.55 MU-M DISTRIBUTED FEEDBACK LASERS GROWN BY MOVPE
ITAYA, Y
FUKUDA, M
NOGUCHI, Y
NAKANO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1289 - L1291
[2] LINEWIDTH-NARROWED DISTRIBUTED FEEDBACK INJECTION-LASERS WITH LONG CAVITY LENGTH AND DETUNED BRAGG WAVELENGTH
LIOU, KY
DUTTA, NK
BURRUS, CA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (09) : 489 - 491
[3] DEPENDENCE OF SPECTRAL LINEWIDTH ON CAVITY LENGTH AND COUPLING COEFFICIENT IN DFB LASER
OGITA, S
KOTAKI, Y
KIHARA, K
MATSUDA, M
ISHIKAWA, H
IMAI, H
[J]. ELECTRONICS LETTERS, 1988, 24 (10) : 613 - 614
[4] LOW-THRESHOLD INGAASP/INP 1.3-MUM DOUBLY BURIED-HETEROSTRUCTURE LASERS WITH A REACTIVE-ION-ETCHED FACET
SAITO, H
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 36 - 38
[5] CURRENT TAILORING FOR LOWERING LINEWIDTH FLOOR
YASAKA, H
FUKUDA, M
IKEGAMI, T
[J]. ELECTRONICS LETTERS, 1988, 24 (12) : 760 - 762

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