MILLIMETER-WAVE FREQUENCY TRIPLING IN BULK SEMICONDUCTORS

被引：16

作者：

KEILMANN, F

BRAZIS, R

BARKLEY, H

KASPAREK, W

THUMM, M

ERCKMANN, V

机构：

[1] UNIV STUTTGART,INST PLASMAFORSCH,W-7000 STUTTGART 80,GERMANY

[2] MAX PLANCK INST PLASMAFORSCH,ASSOC EURATOM,W-8046 GARCHING,GERMANY

来源：

EUROPHYSICS LETTERS | 1990年 / 11卷 / 04期

关键词：

D O I：

10.1209/0295-5075/11/4/008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Third-harmonic generation of high-power millimeter-wave radiation is obtained in bulk semiconductors with low doping. The underlying mechanism is based on the nonlinear response of single mobile electrons. This is in contrast to previously studied centimeter-wave frequency tripling which rests on heating of the carrier gas as a whole at high doping. In a preliminary experiment we have observed a tripling efficiency of the order of 0.05% in n-Si using 70 GHz radiation from a 200 kW gyrotron. © 1990 The Japan Society of Applied Physics.

引用

页码：337 / 342

页数：6

共 9 条

[1]

Bloembergen N., 1965, NONLINEAR OPTICS

[2]

DAS P, 1965, PHYS REV A, V138, P590

[3] INFRARED HIGH-PASS FILTER WITH HIGH CONTRAST [J].